Automotive Image Sensors are required to perform a variety of functions including backup/rear view, surround view, e-mirrors, internal cabin monitoring and front facing machine vision. To enable all of these applications the performance and features of automotive CMOS image sensors must continuously be improved. These varied applications require low light performance at high temperatures, ultra-high intra-scene dynamic range & 120dB, high NIR QE & 50%, fast frame rates, LED flicker mitigation, state of the art security and safety features, low power dissipation, and a small foot print all at an affordable price. To achieve all these requirements in a single cost-effective CMOS process is almost impossible. Therefore, we developed a state-of-the-art wafer stacking technology. This enables us to separately optimize the photo-sensitive pixel wafer from the mixed-mode readout wafer. The pixel wafer is optimized for QE, full well capacity, dark current and read noise, while the mixed-mode wafer is optimized for transistor density, power dissipation and speed. In this presentation we describe our wafer stacking process and present results from our newest OX03C image sensor that uses this fundamental technology.